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Номер в каталоге
Компоненты Описание
BF5030(2006) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
BF5030
(Rev.:2006)
Silicon N-Channel MOSFET Tetrode
Infineon Technologies
BF5030 Datasheet PDF : 10 Pages
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BF5030...
Total power dissipation
P
tot
=
ƒ
(
T
S
)
300
mW
Drain current
I
D
=
ƒ
(
I
G1
)
V
G2S
= 3V
30
mA
200
20
150
15
100
10
50
5
0
0 20 40 60 80 100 120
°C
150
T
S
Output characteristics
I
D
=
ƒ
(
V
DS
)
22
mA
1.4V
18
16
14
1.3V
12
10
1.2V
8
6
1.1V
4
1V
2
0
0
2
4
6
8
V
12
V
DS
0
0
10
20
30
40
Gate 1 current
I
G1
=
ƒ
(
V
G1S
)
V
DS
= 3V
V
G2S
= Parameter
200
µA
60
I
G1
µA
4V
3.5v
100
3V
2.5V
50
2V
0
0
0.5
1
1.5
2
V
3
V
G1S
4
2006-04-13
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