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TDA5155 Просмотр технического описания (PDF) - Philips Electronics

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TDA5155 Datasheet PDF : 24 Pages
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Philips Semiconductors
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
Preliminary specification
TDA5155
SYMBOL
PARAMETER
CONDITIONS
MIN.
Switching characteristics
fSCLK
Vo(cm)
serial interface clock rate
common mode DC output IMR = 10 mA; IWR = 35 mA
voltage change from read to
write mode
trec(W-R)
write-to-read recovery time
(AC and DC settling);
note 9
from 50% of the rising edge of
R/W to steady state read-back
signal: AC and DC settling at
90% (without load at RDx, RDy)
read amplifier OFF: d5 = 0
read amplifier ON: d5 = 1
tsw(R)
head switching (in read
mode), standby to read
active and MR current
change recovery time.
(AC and DC settling);
note 10
from falling edge of SEN to
steady state read-back signal
(without load at RDx, RDy)
toff(R)
read amplifier off time
from falling edge of R/W to read
head inactive
tst(W)
write settling times; note 11 from 50% of the falling edge of
R/W to 90% of the steady state
write current (in write mode)
toff(W)
tsw(W)
write amplifier off time
from rising edge of R/W to
110 × IWR (programmed)
(IWR = 35 mA)
head switching (in write
from falling edge of SEN to write
mode), and standby to write head active
head active
tsw(S)
switch time to and from
sleep mode
DC characteristics
ICC(R)
read mode supply current IMR = 10 mA; note 12
ICC(W)
write mode supply current IWR = 35 mA; note 13
from VCC (5 V)
from VCC(WD) (5 to 8 V)
IDD(STB)
standby mode supply
current
IDD(S)
sleep mode supply current static
Vref
reference voltage for Rext
TYP.
200
3
100
3
50
72
33
54
0.25
0.02
1.32
MAX.
25
4.5
150
4.5
50
70
50
70
100
80
41
61
1
UNIT
MHz
mV
µs
ns
µs
ns
ns
ns
ns
µs
mA
mA
mA
mA
mA
V
1997 Apr 08
20

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