IRFD320 Просмотр технического описания (PDF) - International Rectifier
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IRFD320 Datasheet PDF : 8 Pages
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IRFD320
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions
400 — — V VGS = 0V, ID = 250µA
— 0.51 —
— — 1.8
——
2.0 — 4.0
V/°C
Ω
V
Reference to 25°C, ID = 1mA
VGS = 10.0V, ID = 0.21A
VGS = V, ID = A
VDS = VGS, ID = 250µA
1.7 — — S VDS = 50V, ID = 1.2A
— — 25
VDS = 400V, VGS = 0V
— — 250 µA VDS = 320V, VGS = 0V, TJ = 125°C
— — 100
VGS = 20V
— — -100 nA VGS = -20V
— — 20
ID = 2.0A
— — 3.3 nC VDS = 320V
— — 11
VGS = 10V, See Fig. 6 and 13
— 10 —
— 14 —
— 30 —
— 13 —
VDD = 200V
ns ID = 3.3A
RG = 18Ω
RD = 56Ω, See Fig. 10
— 4.0 —
— 6.0 —
Between lead,
6mm (0.25in.)
nH from package
and center of
die contact
— 410 —
VGS = 0V
— 120 —
— 47 —
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units Conditions
MOSFET symbol
— — 0.49
showing the
A
integral reverse
— — 3.9
p-n junction diode.
— — 1.6 V TJ = 25°C, IS = 0.49A, VGS = 0V
— 270 600 ns TJ = 25°C, IF = 3.3A
— 1.4 3.0 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 50V, starting TJ = 25°C, L = 21mH
RG = 25Ω, IAS = 2.0A. (See Figure 12)
ISD ≤ 2.0A, di/dt ≤ 40A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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