2N2484 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N2484 Datasheet PDF : 2 Pages
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
Ic
ICM
IBM
Plot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb<25°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
60
60
6
50
100
50
360
+150
200
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
r^c
VALUE
480
150
UNIT
K/W
KM/
CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = 45 V
-
-
10 nA-
lE = 0;VCB = 45V;Tj = 150°C
-
-
10 uA
IEBO
emitter cut-off current
Ic = 0; VEB = 5 V
-
-
10 nA
HFE
DC current gain
lc = 1 M; VCE = 5 V
30 -
-
lc = 10nA;VCE = 5V
100 -
500
lc=10uA;VCE = 5V;Tj = 55°C
20 -
-
lc=100nA;VCE = 5V
175 -
-
lc = 500 jiA; VCE = 5 V
200 -
-
lc = 1 mA; VCE = 5 V
250 I -
-
lc = 10mA;VCE = 5V;note1
-
-
800
VcEsat
collector-emitter saturation voltage lc = 1 mA; IB = 0.1mA
-
-
350 mV
VBE
base-emitter voltage
lc = 0.1mA;VCE = 5V
500 -
700 mV
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
-
-
6
PF
Ce
emitter capacitance
lc = ic = 0; VEB = 0.5 V; f = 1 MHz -
9
-
pF
fi
transition frequency
lc = 50 uA; VCE = 5 V; f = 100 MHz 15 -
-
MHz
F
noise figure
lc = 500 fiA; VCE = 5 V; f = 100 MHz 60 80 -
lc = 10 jiA; VCE = 5 V; Rs = 10 ki2
MHz
f=100Hz;B = 20Hz
-
10 dB
f = 1 kHz; B = 200 Hz
3
dB
f = 10 kHz; B = 2 kHz
-
2
dB
Wide band; B = 15.7 kHz
3
dB
Note
1. Pulse test: tp < 300 us; S < 0.01.
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