B1054 Просмотр технического описания (PDF) - New Jersey Semiconductor
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B1054 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1054
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A
VBE(OH) Base-Emitter On Voltage
lc= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB=-100V;IE=0
IEBO
Emitter Cutoff Current
VEB= -3V; lc= 0
hpE-1
DC Current Gain
lc= -20mA; VCE= -5V
hFE-2
DC Current Gain
lc= -1A; VCE= -5V
tlFE-3
DC Current Gain
lc= -3A; VCE= -5V
COB
Output Capacitance
lE=0;VcE=-10V;f,est=1MHz
fi
Current-Gain—Bandwidth Product
lc=-0.5A; VCE= -5V;f,est=1MHz
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50
MA
-50 M A
20
60
200
20
170
PF
20
MHz
hpE-2 Classifications
Q
P
60-120
100-200
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