A1673 Просмотр технического описания (PDF) - New Jersey Semiconductor
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A1673 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1673
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo=-180V(Min)
• Good Linearity of hFE
• Complement to Type 2SC4388
PIN 1.BASE
2.COLLECTOR
3, BETTER
TO-3PML package
APPLICATIONS
• Designed for audio and general purpose applications
u
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
-4
A
85
W
150
"C
Tstg
Storage Temperature Range
-55-150 °c
mm
DIM WIN MAX
A 19.90 20.10
B 15.90 16,10
C 5.50 5.70
D 0.90 1.10
F 3,30 3.50
G 2.90 3.10
H 5.90 6.10
J 0.595 0.605
K 22.30 22.50
L 1.90 2.10
N 10.80 11.00
0 4.90 5.10
R 3.75 3.95
S 3.20 3,40
U 9.90 10,10
Y 4.70 4.90
1 | 1.90 2,10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ofgoina
to press. Ilouever, N.I Semi-Conductorsassumes no responsibility tor any errors or omissions discovered in its use.'
N.I Semi-Conductors encouragescustomers to verily that datasheets are current before placing orders.
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