Elektronische Bauelemente
2SA1037
- 0.15A, - 50V
Small Signal Plastic Encapsulate Transistor
ƔELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Min.
- 60
- 50
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
140
4.0
Max.
-
-
-
- 0.1
- 0.1
- 0.5
560
-
5.0
UNIT
V
V
V
µA
µA
V
-
MHz
pF
TEST CONDITIONS
IC = í50 µA
IC = í1 µA
IE = í50 µA
VCB = í60 V
VEB = í6 V
IC / IB = í50 mA / í5 mA
VCE = í6 V, IC = í1 mA
VCE = í12 V, IE = 2 mA,
f = 30 MHz
VCB = í12 V, IE = 0 A,
f = 1 MHz
ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
hFE
Marking
Q
120 ~ 270
FQ
R
180 ~ 390
FR
S
270 ~ 560
FS
ƔELECTRICAL CHARACTERISTIC CURVES
−50
Ta=100˚C
−20
25˚C
−40˚C
−10
−5
VCE=−6V
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
−10
Ta=25˚C
−35.0
−31.5
−8
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
IB=0
0
−0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
−100
Ta=25˚C
−500
−80 −450
−400
−350
−300
−60
−250
−200
−40
−150
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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