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Номер в каталоге
Компоненты Описание
2SK2734 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2734
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2734 Datasheet PDF : 9 Pages
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2SK2734
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
I
D
=5A
0.1
2.5 A
1A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
0.02
V
GS
= 4 V
10 V
0.01
0.1 0.3 1 3 10 30 100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
I
D
=5A
0.08
0.06
V
GS
= 4 V
1, 2.5 A
0.04
10 V
0.02
1, 2.5, 5 A
0
–40
0
40 80 120 160
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
50
V
DS
= 10 V
Pulse Test
20
10
Tc = –25
°
C
5
25
°
C
2
75
°
C
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
4
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