HFA1100 Просмотр технического описания (PDF) - Renesas Electronics
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HFA1100 Datasheet PDF : 10 Pages
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HFA1100
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
1600m x 1130m
METALLIZATION:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ 0.4kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ 0.8kÅ
Metallization Mask Layout
+IN
V-
HFA1100
PASSIVATION:
Type: Nitride
Thickness: 4kÅ 0.5kÅ
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
HFA1100
-IN
VL
BAL
BAL
VH
V+
OUT
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FN2945 Rev.9.00
October 26, 2004
Page 10 of 10
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