LH28F800SGR-L70 Просмотр технического описания (PDF) - Sharp Electronics

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LH28F800SGR-L70

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

Sharp Electronics 

LH28F800SG-L/SGH-L (FOR TSOP, CSP)

6.2.8 BLOCK ERASE, WORD WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE (contd.) (NOTE 3, 4)

• VCC = 5.0±0.25 V, 5.0±0.5 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

NOTE MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. UNIT

tWHQV1

Word Write Time

tEHQV1

2 10 14

7.5

µs

Block Write Time

2 0.4 0.5

0.25

s

tWHQV2

Block Erase Time

tEHQV2

2

1.3

1.2

s

tWHQV3

Set Lock-Bit Time

tEHQV3

2

18

15

µs

tWHQV4

Clear Block Lock-Bits Time

tEHQV4

2

1.6

1.5

s

tWHRH1

Word Write Suspend Latency Time to Read

7.5

6

µs

tEHRH1

tWHRH2

Erase Suspend Latency Time to Read

tEHRH2

14.4

14.4

µs

NOTES :

1. Typical values measured at TA = +25˚C and nominal

3. These performance numbers are valid for all speed

voltages. Assumes corresponding lock-bits are not set.

versions.

Subject to change based on device characterization.

4. Sampled, not 100% tested.

2. Excludes system-level overhead.

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