QED234 Просмотр технического описания (PDF) - Fairchild Semiconductor

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QED234

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PLASTIC INFRARED

LIGHT EMITTING DIODE

QED233

QED234

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Operating Temperature

Storage Temperature

Soldering Temperature (Iron)(2,3,4)

Soldering Temperature (Flow)(2,3)

Continuous Forward Current

Reverse Voltage

Power Dissipation(1)

Peak Forward Current

Symbol

TOPR

TSTG

TSOL-I

TSOL-F

IF

VR

PD

IFP

Rating

-40 to +100

-40 to +100

240 for 5 sec

260 for 10 sec

100

5

200

1.5

Unit

°C

°C

°C

°C

mA

V

mW

A

1. Derate power dissipation linearly 2.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

5. Pulse conditions; tp = 100 µs, T = 10 ms.

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)

PARAMETER

TEST CONDITIONS

DEVICE SYMBOL

MIN

Peak Emission Wavelength

IF = 20 mA

ALL

PE

—

Spectral Bandwidth

IF = 20 mA

ALL

—

50

Temp. Coefficient of PE

IF = 100 mA

ALL

TC

—

Emission Angle

IF = 100 mA

ALL

2 1/2

—

Forward Voltage

IF = 100 mA, tp = 20 ms ALL

VF

—

Temp. Coefficient of VF

IF = 100 mA

ALL

TCV

—

Reverse Current

VR = 5 V

ALL

IR

—

Radiant Intensity

QED233

10

IF = 100 mA, tp = 20 ms

IE

QED234

27

Temp. Coefficient of IE

Rise Time

Fall Time

IF = 20 mA

IF = 100 mA

ALL

TCI

—

ALL

tr

—

ALL

tf

—

TYP

940

—

0.2

40

—

-1.5

—

—

—

-0.6

1000

1000

MAX

—

nm

—

—

1.6

—

10

50

—

—

—

—

UNITS

nm

nm/K

Deg.

V

mV/K

µA

mW/sr

%/K

ns

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10/31/01 DS300338

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