RB717F Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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RB717F Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB717F SCHOTTKY BARRIER DIODE
FEATURES:
Low VF, Low VR
High reliability
MARKING: 3E·
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25 ℃
Parameter
Peak reverse voltage
DC reverse voltage
Non-repetitive Peak Forward Surge
Current@t=8.3ms
Average forward current
Power dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
VRM
VR
IFSM
IO
PD
RθJA
Tj
Tstg
Limit
40
40
200
30
200
500
125
-55~+150
Unit
V
V
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHA RACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Symbol
Test conditions
Min
IR
VR=10V
Typ
Max
1
Forward voltage
Capacitance between terminals
VF
IF=1mA
CT
VR=1V, f=1MHz
0.37
2.0
Unit
μA
V
pF
www.cj-elec.com
1
D,Oct,2015
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