RB717F Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

RB717F

Schottky Barrier Diode

Galaxy Semi-Conductor 

Schottky Barrier Diode

FEATURES

 High reliability type.

 Low VF.

 High reliability.

Pb

Lead-free

Production specification

RB717F

APPLICATIONS

 Low current rectification.

SOT-323

ORDERING INFORMATION

Type No.

Marking

RB717F

3E

Package Code

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Limits

Unit

Repetitive peak reverse Voltage

VRM

40

V

DC Reverse Voltage

VR

40

V

Average rectified forward current

IO

30

mA

Forward current surge peak(60Hz.1cyc)

IFSM

200

mA

Power Dissipation

Pd

200

mW

Operating Junction Temperature Range

Tj

125

℃

Storage Temperature Range

TSTG

-45 to +125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Min TYP MAX UNIT Test Condition

Forward Voltage

VF

Reverse Leakage Current

IR

Diode Capacitance

CD

-

0.37 V

IF=1.0mA

-

1.0 μA VR=10V

-

2.0

pF VR=1.0V,f=1MHz

F071

Rev.A

www.gmesemi.com

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