2SA1979S Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2SA1979S

Silicon PNP transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1979S

Rev.F Apr.-2017

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

-40

-32

-5.0

-500

200

150

-55～150

单位

Unit

V

V

V

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-100μA IE =0

VCEO IC=-1mA

IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-40

V

-32

V

Emitter-Base Breakdown Voltage VEBO IE =-10μA IC=0

-5.0

V

Collector Cut-Off Current

ICBO VCB=-40V IE=0

-0.1 μA

Emitter Base Cut-Off Current

IEBO VEB=-5.0V Ic=0

-0.1 μA

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=-1.0V IC=-100mA 70

VCE(sat) IC=-100mA IB=-10mA

240

-0.25 V

Transition Frequency

Collector Output Capacitance

fT VCE=-6.0V IE=-20mA

Cob

VCB=-6.0V IE=0

f=1.0MHz

200

MHz

7.5

pF

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