QM15KD-HB Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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QM15KD-HB Datasheet PDF : 6 Pages
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SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 2
7 VCC=300V
5
4
IB1=90mA
IC=15A
3
Tj=25°C
Tj=125°C
2
ts
10 1
7
5
4
tf
3
2
10 0
10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 100
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 2
7 TC=25°C
5 NON-REPETITIVE
3
2
DC
10 1
7
5
100µs
3
2
10 0
7
5
3
2
10 –1
10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 5 710 1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
32
Tj=125°C
28
IB2=–0.5A
24
IB2=–3.0A
20
16
12
8
4
0
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
SECOND
90
BREAKDOWN
AREA
80
70
60
COLLECTOR
50 DISSIPATION
40
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 2
7
Tj=25°C
5
Tj=125°C
4
3
2
10 1
7
5
4
3
2
10 0
0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
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