2SD1236L Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1236L Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10IB1=-10IB2=2A
VCC=50V,RL=25Ω
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SD1236L
MIN TYP. MAX UNIT
80
V
90
V
6
V
0.4
V
100 μA
100 μA
70
280
30
20
MHz
0.1
μs
1.2
μs
0.4
μs
2
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