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2SD1236L Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2SD1236L
Iscsemi
Inchange Semiconductor Iscsemi
2SD1236L Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1236L
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB920L
·Low collector saturation voltage
·Large current capacity.
APPLICATIONS
·Relay drivers,high speed inverters,
converters,and other general
high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-peak
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
90
80
6
5
9
30
1.75
150
-55~150
UNIT
V
V
V
A
A
W

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