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VN02NPT

HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics 

ELECTRICAL CHARACTERISTICS (cont’d)

Table 8. Protections and Diagnostics

Symbol

Parameter

Test Conditions

VSTAT(3) Status Voltage Output

Low

ISTAT = 1.6 mA

VUSD Under Voltage Shut Down

VSCL(3) Status Clamp Voltage

ISTAT = 10 mA

ISTAT = –10 mA

tsc

Switch-off Time in Short RLOAD < 10 mΩ;Tc = 25 °C

Circuit Condition at Start-

Up

IOV

Over Current

RLOAD < 10 mΩ –40 ≤ Tc ≤ 125 °C

IAV

Average Current in Short RLOAD < 10 mΩ; Tc = 85 °C

Circuit

IOL

Open Load Current Level

TTSD

Thermal Shut-down

Temperature

TR

Reset Temperature

Note: 3. Status determination > 100 ms after the switching edge.

VN02NSP/VN02NPT

Min. Typ. Max. Unit

0.4

V

6.5

V

6

V

–0.7

V

1.5

5

ms

28

A

0.9

A

5

70

mA

140

°C

125

°C

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which

indicates open circuit (no load) and over

temperature conditions. The output signals are

processed by internal logic.

To protect the device against short circuit and

over-current condition, the thermal protection

turns the integrated Power MOS off at a minimum

junction temperature of 140 °C. When the

temperature returns to about 125 °C the switch is

automatically turned on again.

In short circuit conditions the protection reacts with

virtually no delay, the sensor being located in the

region of the die where the heat is generated.

PROTECTING THE DEVICE AGAINST

REVERSE BATTERY

The simplest way to protect the device against a

continuous reverse battery voltage (-26V) is to

insert a Schottky diode between pin 1 (GND) and

ground, as shown in the typical application circuit

(Figure 7).

The consequences of the voltage drop across this

diode are as follows:

– If the input is pulled to power GND, a negative

voltage of -VF is seen by the device. (VIL, VIH

thresholds and VSTAT are increased by VF with

respect to power GND).

– The undervoltage shutdown level is increased

by VF.

If there is no need for the control unit to handle

external analog signals referred to the power

GND, the best approach is to connect the

reference potential of the control unit to node (1)

(see application circuit in Figure 8), which

becomes the common signal GND for the whole

control board.

In this way no shift of VIH, VIL and VSTAT takes

place and no negative voltage appears on the

INPUT pin; this solution allows the use of a

standard diode, with a breakdown voltage able to

handle any ISO normalized negative pulses that

occurs in the automotive environment.

5/12

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