TIP35B Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

TIP35B

SILICON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

NPN TIP35-A-B-C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

TIP35

ICES

Collector Cutoff Current IE= 0, VCE = VCEO

TIP35A

TIP35B

-

- 0.7 Ma

TIP35C

ICEO

IB= 0, VCE = 30V

Collector Cutoff Current

IB= 0, VCE = 60V

TIP35

TIP35A

-

TIP35B

TIP35C

-

-

-

1

mA

1

TIP35

IEBO

Emitter Cutoff Current VEB= 5 V, IC= 0

TIP35A

TIP35B

-

-

1 mA

TIP35C

TIP35 40 -

-

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= 30 mA, IB= 0

TIP35A 60 -

TIP35B 80 -

-

-

V

TIP35C 100 -

-

TIP35

IC= 15 A, IB= 1.5 A

TIP35A

TIP35B

-

- 1.8 V

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

TIP35C

TIP35

IC= 25 A, IB= 5 A

TIP35A

TIP35B

-

-

4

V

TIP35C

TIP35

IC= 15 A, VCE= 4 V

TIP35A

TIP35B

-

-

2

V

VBE(on)

Base-Emitter Voltage

(*)

TIP35C

TIP35

IC= 25 A, VCE= 4 V

TIP35A

TIP35B

-

-

4

V

TIP35C

TIP35

VCE=4 V, IC= 1.5 A

TIP35A

TIP35B

25

-

-

hFE

DC Current Gain (*)

TIP35C

TIP35

-

VCE= 4 V, IC= 15 A

TIP35A

TIP35B

15

-

75

TIP35C

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

04/10/2012

COMSET SEMICONDUCTORS

3|4

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