AO4402 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

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AO4402

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

March 2002

AO4402

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4402 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications.

Features

VDS (V) = 30V

ID = 12A

RDS(ON) < 14mΩ (VGS = 10V)

RDS(ON) < 16mΩ (VGS = 4.5V)

RDS(ON) < 22mΩ (VGS = 2.5V)

S

D

S

D

S

D

G

D

SOIC-8

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

Power Dissipation

TA=25°C

TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

30

±12

12

10

80

3

2.1

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

23

48

Maximum Junction-to-Lead C

Steady-State

RθJL

12

Max

40

65

16

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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