DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

KO4447 Просмотр технического описания (PDF) - KEXIN Industrial

Номер в каталоге
Компоненты Описание
производитель
KO4447
Kexin
KEXIN Industrial Kexin
KO4447 Datasheet PDF : 4 Pages
1 2 3 4
SMD Type
MOSFET
P-Channel MOSFET
AO4447 (KO4447)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Test Conditions
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, TJ=55
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-10V, ID=-15A
VGS=-10V, ID=-15A TJ=125
VGS=-4V, ID=-13A
VGS=-10V, VDS=-5V
VDS=-5V, ID=-15A
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15 V, ID=-15A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
VGS=-10V, VDS=-15V, ID=-15A
VGS=-10V, VDS=-15V, RL=1.7Ω,RG=3Ω
IF=-15A, dI/dt=100A/μs
IS=-1A,VGS=0V
Min Typ Max Unit
-30
V
-1
μA
-10
±10 uA
-0.9 -1.25 -1.6 V
6.7 7.5
9.4 12 mΩ
9.2 12
-60
A
60
S
5500 6600
745
pF
473
3.1 4
Ω
88.8 120
45.2 60
nC
10.1
19.4
12
11.5
100
ns
40
46.6 60
67.7
nC
-5.5 A
-0.69 -1
V
Marking
Marking
4447
KC****
2 www.kexin.com.cn

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]