KO4441 Просмотр технического описания (PDF) - KEXIN Industrial

Номер в каталоге

Компоненты Описание

производитель

KO4441

P-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel MOSFET

AO4441 (KO4441)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

On state drain current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage

Symbol

VDSS

IDSS

IGSS

VGS(th)

RDS(On)

ID(ON)

gFS

Ciss

Coss

Crss

Rg

Test Conditions

ID=-250μA, VGS=0V

VDS=-48V, VGS=0V

VDS=-48V, VGS=0V, TJ=55℃

VDS=0V, VGS=±20V

VDS=VGS, ID=-250uA

VGS=-10V, ID=-4A

VGS=-10V, ID=-4A TJ=125℃

VGS=-4.5V, ID=-3A

VGS=-10V, VDS=-5V

VDS=-5V, ID=-4A

VGS=0V, VDS=-30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Qrr

IS

VSD

VGS=-10V, VDS=-30V, ID=-4A

VGS=-10V, VDS=-30V, RL=7.5Ω,

RGEN=3Ω

IF=-4A, dI/dt=100A/us

IS=-1A,VGS=0V

Min Typ Max Unit

-60

V

-1

uA

-5

±100 nA

-1

-3

V

100

130

mΩ

130

-20

A

10

S

930 1120

85

pF

35

7.2 9

Ω

16 20

8 10

nC

2.5

3.2

8

3.8

31.5

ns

7.5

27 35

32

nC

-4

A

-1

V

Note :The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.

■ Marking

Marking

4441

KC****

2 www.kexin.com.cn

Share Link: