HSDL-4420 Просмотр технического описания (PDF) - LiteOn Technology

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HSDL-4420

High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package

LiteOn Technology 

HSDL-44xx Absolute Maximum Ratings

Parameter

Peak Forward Current (Duty Factor = 20%,

Pulse Width = 100 µs)

DC Forward Current

Power Dissipation

Reverse Voltage (IR = 100 µA)

Transient Forward Current (10 µs Pulse)

Operating Temperature

Storage Temperature

Junction Temperature

Lead Solder Temperature

[1.6 mm (0.063 in.) from body]

Reflow Soldering Temperatures

Convection IR

Vapor Phase

Symbol

IFPK

IFDC

PDISS

VR

IFTR

TO

TS

TJ

Min.

5

-40

-55

Max.

500

100

100

1.0

85

100

110

260/5 s

Unit

Ref.

mA

Fig. 7, 8

mA

Fig. 6

mW

V

A

[1]

°C

°C

°C

°C

235/90 s

°C

215/180 s

°C

Fig. 20

Note:

1. The transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the LED die and the wire bonds.

HSDL-44xx Electrical Characteristics at TA = 25°C

Parameter

Symbol

Min.

Typ.

Forward Voltage

VF

1.30

1.50

2.15

Forward Voltage

∆VF/∆T

-2.1

Temperature Coefficient

-2.1

Series Resistance

RS

2

Diode Capacitance

CO

50

Reverse Voltage

VR

5

20

Thermal Resistance,

Rqjp

170

Junction to Pin

Max.

1.70

Unit

V

mV/°C

Ω

pF

V

°C/W

Condition

IFDC = 50 mA

IFPK = 250 mA

IFDC = 50 mA

IFDC = 100 mA

IFDC = 100 mA

0 V, 1 MHz

IR = 100 µA

Ref.

Fig. 2

Fig. 3

11

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