KO4447A Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

KO4447A

P-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel MOSFET

AO4447A (KO4447A)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

On state drain current

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Maximum Body-Diode Continuous Current

Diode Forward Voltage

Symbol

VDSS

IDSS

IGSS

VGS(th)

RDS(On)

ID(ON)

gFS

Ciss

Coss

Crss

Rg

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

Qrr

IS

VSD

Test Conditions

ID=-250μA, VGS=0V

VDS=-30V, VGS=0V

VDS=-30V, VGS=0V, TJ=55℃

VDS=0V, VGS=±16V

VDS=VGS, ID=-250uA

VGS=-10V, ID=-17A

VGS=-10V, ID=-17A TJ=125℃

VGS=-4.5V, ID=-15A

VGS=-4V, ID=-13A

VGS=-10V, VDS=-5V

VDS=-5V, ID=-17A

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-17A

VGS=-10V, VDS=-15V, RL=0.9Ω,

RGEN=3Ω

IF=-17A, dI/dt=300A/us

IS=-1A,VGS=0V

Min Typ Max Unit

-30

V

-1

uA

-5

±10 uA

-0.8

-1.6 V

7

8.5

mΩ

8

9

-160

A

70

S

4580 5500

755

pF

564

160 210 Ω

87 105

41

nC

12.8

17

180

260

1200

ns

9700

32 40

77

nC

-3

A

-1

V

Note :The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking

Marking

4447A

KC****

2 www.kexin.com.cn

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