FQA70N15 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQA70N15 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.12
0.09
VGS = 10V
0.06
VGS = 20V
0.03
0.00
0
※ Note : TJ = 25℃
50
100
150
200
250
300
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
102
101
175℃
100
10-1
2
25℃
-55℃
※ Notes :
1. VDS = 30V
2. 250μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
6000
5000
4000
3000
2000
1000
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
12
10
VDS = 30V
VDS = 75V
8
VDS = 120V
6
4
2
※ Note : ID = 70 A
0
0
30
60
90
120
150
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
3
FQA70N15 Rev. C2
www.fairchildsemi.com
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