MJ100OO
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (2)
Collector-Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vdamp = Rated VCEO>
MJ10000
Symbol
vCEO(sus)
Collector-Emitter Sustaining Voltage (Table 1, Figure 12)
IC = 2 A, Vc|arnp = Rated VCEX. TC = 100°C
IC = 10 A, Vc|amp = Rated VCEX. TC = 100°c
MJ10000
MJ10000
VCEX(sus)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1-5 Vdc)
(VCEV = Ra'ed Value, VBE(off) = 1 -5 vdc. TC = 150°C)
Collector Cutoff Current
<VCE = Rated VCEV. RBE = so n, TC = ioo°c)
Emitter Cutoff Current
(VEB = 8 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10AdC, VCE = 5 Vdc)
!CEV
'CER
IEBO
!S/b
hFE
Collector-Emitter Saturation Voltage
(IC = 10Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 1Adc)
(IC = 10Adc, IB = 400 mAdc, TC = 100°C)
vCE(sat)
Base-Emitter Saturation Voltage
(\ = 10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, Tc = 100°C)
vBE(sat)
Diode Forward Voltage (1)
Vf
(lp = 10 Adc)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
hfe
(IC = 1 .0 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
Cob
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc = 250 Vdc, Ic = 1 0 A,
»d
Ig-) = 400 mA, VBE(off) ~ 5 Vdc, tp = 50 us,
V
Duty Cycle < 2%)
*s
tf
Inductive Load, Clamped (Table 1)
Storage Time
(Ic = 10 A(pk), VC|amp = Rated VCEX. 'B1 = 400mA.
tsv
Crossover Time
vBE(off) = 5 vdc. Tc = 100°C)
tc
Storage Time
(Ic = 10 A(pk), VC|amp = Rated VCEX. 'B1 = 400 mA,
tsv
Crossover Time
VeE(off) = 5vd°.TC = 25°C)
tc
Min
Typ
Max
350
_
—
400
—
—
275
—
—
0.25
5
—
—
5
—
—
150
See Figure 11
50
—
600
40
—
400
,
1.9
3
—
—
2
—
^
2.5
—
—
2.5
—
3
5
10
—
100
325
0.12
0.2
—
0.20
0.6
1.5
3.5
1.1
2.4
—
3.5
5.5
1.5
3.7
—
1.0
0.7
—
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
Adc
—
Vdc
Vdc
Vdc
—
PF
us
us
us
us
us
us
us
us