BGD812 Просмотр технического описания (PDF) - Philips Electronics
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BGD812 Datasheet PDF : 12 Pages
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Philips Semiconductors
860 MHz, 18.5 dB gain power doubler
amplifier
Product specification
BGD812
handbook−,4h0alfpage
CTB
(dB)
−50
−60
−70
MLD354
52
(1)
Vo
(dBmV)
48
handboo−k,4h0alfpage
Xmod
(dB)
−50
(2)
44
−60
(3)
(4)
40
−70
MLD355
52
(1)
Vo
(dBmV)
48
(2)
44
(3)
(4)
40
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
handbook−,5h0alfpage
CSO
(dB)
−60
−70
−80
MLD356
52
(1)
Vo
(dBmV)
48
(2)
44
(3)
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
6
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