BFR540 Просмотр технического описания (PDF) - Philips Electronics
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BFR540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
25
handbook, halfpage
gain
(dB)
20
MSG
15
10
MRA690
Gmax
GUM
5
0
0
20
VCE = 8 V; f = 900 MHz.
40
60
IC (mA)
Fig.6 Gain as a function of collector current.
25
handbook, halfpage
gain
(dB)
20
MRA691
15
10
Gmax
GUM
5
0
0
20
VCE = 8 V; f = 2 GHz.
40
60
IC (mA)
Fig.7 Gain as a function of collector current.
handbook,5h0alfpage
gain
(dB)
40
GUM
MSG
30
20
10
0
10
102
MRA692
Gmax
103
104
f (MHz)
VCE = 8 V; Ic = 10 mA.
Fig.8 Gain as a function of frequency.
1999 Aug 23
50
handbook, halfpage
gain
(dB)
40 GUM
MSG
30
MRA693
20
10
0
10
Gmax
102
103
104
f (MHz)
VCE = 8 V; Ic = 40 mA.
Fig.9 Gain as a function of frequency.
6
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