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BFR540 Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BFR540
NPN 9 GHz wideband transistor
Philips Electronics
BFR540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
600
1/2 page (Datasheet)
P
tot
(mW)
400
MEA398 - 1
22 mm
250
handbook, halfpage
hFE
200
150
MRA687
100
200
50
0
0
50
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
010
−
2
10
−
1
1
10
IC (mA)
10
2
V
CE
= 8 V.
Fig.3 DC current gain as a function of collector
current.
1.0
handbook, halfpage
Cre
(pF)
0.8
0.6
MRA688
0.4
0.2
0
0
4
8
VCB (V)
12
I
C
= 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
1999 Aug 23
12
handbook, halfpage
fT
(GHz)
8
4
MRA689
VCE = 8V
VCE = 4V
0
10
−
1
1
T
amb
= 25
°
C; f = 1 GHz.
10
IC (mA)
10
2
Fig.5 Transition frequency as a function of
collector current.
5
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