BFR540 Просмотр технического описания (PDF) - Philips Electronics
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BFR540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral
power gain (note 1)
S212
F
insertion power gain
noise figure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
Vo
output voltage (note 3)
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
note 2
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 Ω; Tamb = 25 °C
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -(--1-----–------S----1---1---S-2---)2--(-1--1--2--–------S-----2--2----2----) dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
MIN. TYP. MAX. UNIT
−
−
50 nA
60 120 250
−
2
−
pF
−
0.9 −
pF
−
0.6 −
pF
−
9
−
GHz
−
14 −
dB
−
7
−
dB
12 13 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
−
21 −
dBm
−
34 −
dBm
−
550 −
mV
1999 Aug 23
4
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