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BFG590 Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BFG590
NPN 5 GHz wideband transistors
Philips Electronics
BFG590 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
30
handbook, halfpage
gain
(dB)
20
10
MLC059
G
max
GUM
12
handbook, halfpage
gain
(dB)
8
4
MLC060
G
max
GUM
0
0
20
40
60
80
100
IC (mA)
f = 900 MHz; V
CE
= 4 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0
20
40
60
80
100
IC (mA)
f = 2 GHz; V
CE
= 4 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G
UM
MSG
30
20
10
0
10
10
2
MLC061
G
max
10
3
10
4
f (MHz)
I
C
= 20 mA; V
CE
= 4 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Oct 02
50
hand
g
bo
a
o
in
k, halfpage
(dB)
40
G UM
MSG
30
20
10
0
10
10
2
MLC062
G
max
10
3
10
4
f (MHz)
I
C
= 80 mA; V
CE
= 4 V.
Fig.9 Gain as a function of frequency;
typical values.
6
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