MMBT3904 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

MMBT3904

Silicon NPN transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT3904

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

*PC

Tj

Tstg

数值

Rating

60

40

6.0

200

200

350

150

-55～150

*在 7×5×0.6mm 陶瓷板上 *When mounted on a 7×5×0.6mm ceramic board

电性能参数 / Electrical Characteristics(Ta=25℃)

单位

Unit

V

V

V

mA

mW

mW

℃

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Output Capacitance

Storage Time

Fall Time

Delay Time

Rise Time

Input Capacitance

符号

Symbol

VCBO

测试条件

Test Conditions

IC=10μA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

60

V

VCEO IC=1.0mA IB=0

40

V

VEBO IE=10μA

IC=0

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

hFE(4)

hFE(5)

VCE(sat)(1)

VCE(sat)(2)

VBE(sat)(1)

VBE(sat) (2)

fT

Cob

tstg

tf

td

tr

Cib

VCB=30V IE=0

VEB=3.0V IC=0

VCE=1.0V IC=10mA

VCE=1.0V IC=100mA

VCE=1.0V IC=50mA

VCE=1.0V IC=1.0mA

VCE=1.0V IC=0.1mA

IC=10mA IB=1.0mA

IC=50mA IB=5.0mA

IC=10mA IB=1.0mA

IC=50mA IB=5.0mA

VCE=20V IC=10mA

f=100MHz

VCB=5.0V f=1.0MHz

VCC=3.0V IC=10mA

IB1=-IB2=1.0mA

VCC=3.0V IC=10mA

IB1=-IB2=1.0mA

VCC=3.0V VBE=0.5V

IC=10mA IB1=1.0mA

VCC=3.0V VBE=0.5V

IC=10mA IB1=1.0mA

VEB=0.5V f=1.0MHz

6.0

100

30

60

70

40

0.65

300

V

0.05 μA

0.05 μA

300

0.2 V

0.3 V

0.85 V

0.95 V

MHz

4.0 pF

200 ns

50 ns

35 ns

35 ns

8.0 pF

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