BCP51(2008) Просмотр технического описания (PDF) - Infineon Technologies
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BCP51 Datasheet PDF : 6 Pages
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BCP51...-BCP53...
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 3 BCP 51...53
h FE
5
100 C
102 25 C
-50 C
5
10 1
5
EHP00261
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 4 BCP 51...53
Ι C mA
10 3
5
10 2
5
100 C
25 C
-50 C
EHP00264
10 1
5
10 0
10 0
10 1
10 2
103 mA 104
ΙC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 0
0
0.2
0.4
0.6 V 0.8
V CEsat
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 4 BCP 51...53
Ι C mA
10 3
10 2
100 C
25 C
-50 C
10 1
EHP00263
10 4 BCP 51...53
nA
Ι CBO
10 3
10 2
10 1
10 0
EHP00262
max
typ
10 0
0
0.2 0.4 0.6 0.8 V 1.2
V BEsat
10 -1
0
4
50
100 C 150
TA
2008-10-10
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