DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BYW29-200 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
BYW29-200
General
General Semiconductor General
BYW29-200 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES BYW29-50 THRU BYW29-200
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
10
RESISTIVE OR INDUCTIVE LOAD
8.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
80
TJ=TJ max.
10ms SINGLE HALF SINE-WAVE
(JEDEC Method)
6.0
60
4.0
40
2.0
20
0
0
50
100
150
CASE TEMPERATURE, °C
0
1
10
100
NUMBER OF CYCLES AT 50 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
TJ=25°C
10
TJ=125°C
PULSE WIDTH=300µs
10
1% DUTY CYCLE
TJ=100°C
1
1
0.1
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
80
70
60
50
40
30
20
0.1
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]