2SC1907 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC1907

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC1907

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

30

V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞

19

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

2

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

1.0

V

0.5 μA

hFE

DC Current Gain

IC= 10mA ; VCE= 10V

40

fT

Current-Gain—Bandwidth Product

IC= 10mA ; VCE= 10V

900 1100

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

1.0 2.0 pF

rbb’ • CC Base Time Constant

VCB= 10V,IC = 10 mA,f = 31.8 MHz

10 25 ps

Pout

Oscillation Output Power

VCB = 10 V,IC = 10mA;f = 930MHz

8

mW

isc Website：www.iscsemi.cn

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