BCW70LT1 Просмотр технического описания (PDF) - ON Semiconductor
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BCW70LT1 Datasheet PDF : 8 Pages
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BCW70LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VEBO
IC
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
–45
–5.0
–100
Max
225
1.8
556
300
2.4
417
– 55 to
+150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23 (TO–236AB)
CASE 318
STYLE 6
DEVICE MARKING
H2x
x = Monthly Date Code
ORDERING INFORMATION
Device
Package
Shipping
BCW70LT1
SOT–23
3000 Units/Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
1
December, 1999 – Rev. 0
Publication Order Number:
BCW70LT1/D
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