A1705(1998) Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

A1705
(Rev.:1998)

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

2SA1705/2SC4485

Parameter

Collector-to-Emitter Saturation Voltage

Symbol

Conditions

VCE(sat) IC=(–)500mA, IB=(–)50mA

Base-to-Emitter Saturation Voltage

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Turn-ON TIme

Storage Time

VBE(sat)

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

tON

tstg

IC=(–)500mA, IB=(–)50mA

VCB=(–)10V, f=1MHz

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

Fall Time

tf

See specified Test Circuit

* : The 2SA1705/2SC4485 are classified by 100mA hFE as follows :

100 R 200 140 S 280 200 T 400

Switching Time Test Circuit

Ratings

Unit

min

typ

max

(–180) (–500) mV

120 300 mV

(–)0.9 (–)1.2 V

(12)8.5

pF

(–)60

V

(–)50

V

(–)5

V

40

V

(300)

ns

350

ns

30

ns

Unit (resistance : Ω, capacitance : F)

No.3025-2/4

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