LHF08CH1 Просмотр технического описания (PDF) - Sharp Electronics

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Компоненты Описание

производитель

LHF08CH1

Flash Memory 8M (1MB × 8)

Sharp Electronics 

sharp

LHF08CH1

17

Start

Write 20H,

Block Address

Write D0H,

Block Address

Read Status

Register

0

SR.7=

1

Full Status

Check if Desired

Block Erase

Complete

Suspend Block

No

Erase Loop

Suspend

Block Erase Yes

Bus

Operation

Write

Write

Command

Erase Setup

Erase

Confirm

Comments

Data=20H

Addr=Within Block to be Erased

Data=D0H

Addr=Within Block to be Erased

Read

Status Register Data

Standby

Check SR.7

1=WSM Ready

0=WSM Busy

Repeat for subsequent block erasures.

Full status check can be done after each block erase or after a sequence of

block erasures.

Write FFH after the last operation to place device in read array mode.

FULL STATUS CHECK PROCEDURE

Read Status Register

Data(See Above)

1

SR.3=

0

VPP Range Error

1

SR.1=

Device Protect Error

0

1

SR.4,5=

0

Command Sequence

Error

1

SR.5=

0

Block Erase Successful

Block Erase Error

Bus

Operation

Command

Comments

Standby

Standby

Check SR.3

1=VPP Error Detect

Check SR.1

1=Device Protect Detect

RP#=VIH,Block Lock-Bit is Set

Only required for systems

implementing lock-bit configuration

Standby

Check SR.4,5

Both 1=Command Sequence Error

Standby

Check SR.5

1=Block Erase Error

SR.5,SR.4,SR.3 and SR.1 are only cleared by the Clear Status

Register Command in cases where multiple blocks are erased

before full status is checked.

If error is detected, clear the Status Register before attempting

retry or other error recovery.

Figure 5. Automated Block Erase Flowchart

Rev. 1.3

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