NXP Semiconductors
PNP high-voltage transistors
Product data sheet
BF621; BF623
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector-base cut-off current
IE = 0 A; VCB = −200 V
−
IE = 0 A; VCB = −200 V; Tj = 150 °C
−
emitter-base cut-off current
IC = 0 A; VEB = −5 V
−
DC current gain
IC = −25 mA; VCE = −20 V
50
collector-emitter saturation voltage IC = −30 mA; IB = −5 mA
−
feedback capacitance
IC = ic = 0 A; VCE = −30 V; f = 1 MHz
−
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
MAX.
−10
−10
−50
−
−800
1.6
−
UNIT
nA
µA
nA
mV
pF
MHz
2004 Dec 14
7