FDPF44N25 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDPF44N25 Datasheet PDF : 7 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.10
0.08
0.06
0.04
0
VGS = 10V
VGS = 20V
∝ Note : TJ = 25∩
25
50
75
100
125
150
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
∝ Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
2
150oC
25oC
-55oC
∝ Notes :
1. VDS = 40V
2. 250レs Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
150∩ 25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 50V
VDS = 125V
8
VDS = 200V
6
4
2
∝ Note : ID = 44A
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
FDPF44N25 Rev A
3
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