Philips Semiconductors
Battery power unit
Objective specification
TEA1202TS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
DIGITAL INPUT LEVELS
VlL(n)
LOW-level input voltage on all
digital pins
0
−
VIH(n)
HIGH-level input voltage
on pins SYNC/PWM,
SHDWN0 and SHDWN2
note 7
0.55V4 −
all other digital input pins
V4 − 0.4 −
Low dropout voltage regulators; note 8
VLDO
Vdropout
Vdrop
output voltage range
dropout voltage
minimum drop voltage for
functionality within
specification
VLDO < V4 + 0.4 V
ILDO = 50 mA; note 9
ILDO = 50 mA
1.30
−
−
−
250
−
ILDO(max) maximum output current
in regulation
−
50
∆VLDO
output voltage accuracy
VI − VLDO = 2 V; ILDO = 10 µA −2.0
−
∆Vline
line voltage regulation
VI − VLDO > Vdrop
−
−
∆Vload
load voltage regulation
10 µA < ILDO < 50 mA
−
−
PSRR
power supply ripple rejection note 10
25
−
tres
response time
Iq(LDO)
Ishdwn(LDO)
quiescent current
shut-down current
after load step from no load to −
200
ILDO(max)
−
50
−
−
SWITCH CIRCUIT
RDSon
drain-to-source resistance in VFB1,2 > 2 V; Tj = 27 °C
−
200
switched-on state
IO(max)
maximum output current in
switched-on state
VFB1,2 > 2 V
0.40 0.45
Low battery detector
ILBD
tt(HL)
supply current of detector
transition time
DETECTION INPUT PIN LBI1
Vdet
low battery detection level
Vhys
low battery detection
hysteresis
TCVdet
temperature coefficient of
detection level
TCVhys
temperature coefficient of
detection hysteresis
VI = 0.9 V
falling Vbat
falling Vbat
−
20
−
2
0.88 0.90
36
40
−
0
−
0.175
DETECTION OUTPUT PIN LB0
IO(sink)
output sink current
15
−
MAX. UNIT
0.4
V
V4 + 0.3 V
V4 + 0.3 V
5.50 V
75
mV
−
mV
−
mA
+2.0 %
1
mV
1
mV
−
dB
−
µs
−
µA
1
µA
−
mΩ
0.50 A
−
µA
−
µs
0.92 V
44
mV
−
mV/K
−
mV/K
−
µA
2000 Jun 08
11