MSARS200S20LP Просмотр технического описания (PDF) - Microsemi Corporation

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MSARS200S20LP

HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MSARS200S20LP

Features

MSARS200S20LRP

• passivated mesa structure for very low leakage currents

• Epitaxial structure minimizes forward voltage drop

• Low profile plastic surface mount package with CTE matched base

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, MSARS200S20LP) and

reverse polarity (strap-to-cathode: MSARS200S20LRP)

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤ 125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

SYMBOL

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

Tj

Tstg

θJC

200 Volts

200 Amps

HIGH CURRENT

CAPABILITY &

LOW VOLTAGE

DROP STANDARD

RECOVERY

RECTIFIER

MAX.

UNIT

200

200

200

200

4

750

-55 to +125

-55 to +125

0.20

Volts

Volts

Volts

Amps

Amps/°C

Amps

°C

°C

°C/W

Mechanical Outline

Plastic ThinKey™3

Molybdenum pad with Ni

plating and Sn63 solder finish

Cu/Invar/Cu

strap with Ni

plating and

Sn63 solder

finish on foot

Datasheet# MSC1363

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