PDTA124EE Просмотр технического описания (PDF) - Philips Electronics
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PDTA124EE Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA124EE
103
handbook, halfpage
hFE
102
10
MBK790
(1)
(2)
(3)
−1
handbook, halfpage
VCEsat
(V)
−10−1
MBK789
(1)
(2)
(3)
1
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10−−210−1
−1
−10
−102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
handbook, halfpage
Vi(off)
(V)
(1)
−1
(2)
(3)
MBK792
−102
handbook, halfpage
Vi(on)
(V)
−10
−1
MBK791
(1)
(2)
(3)
−10−−110−2
−10−1
−1
−10
IC (mA)
VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
−10−1
−10−1
−1
−10
−102
IC (mA)
VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1998 Jul 23
4
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