KA7818ETU Просмотр технического описания (PDF) - Fairchild Semiconductor
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KA7818ETU Datasheet PDF : 28 Pages
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Electrical Characteristics (KA7810AE)
Refer to the test circuit, 0°C < TJ < +125 °C, IO = 1 A, VI = 16 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VO
Output Voltage
TJ =+25°C
IO = 5 mA to 1 A, PO ≤ 15 W,
VI = 12.8 V to 25 V
9.8 10.0 10.2
V
9.6 10.0 10.4
VI = 12.8 V to 26 V, IO = 500 mA
8
100
Regline Line Regulation(25)
VI = 13 V to 20 V
TJ = +25°C
VI = 12.5 V to 25 V
VI = 13 V to 20 V
4
50
mV
8
100
3
50
Regload Load Regulation(25)
TJ = +25°C, IO = 5 mA to 1.5 A
IO = 5 mA to 1 mA
12 100
12
100 mV
IO = 250 mA to 750 mA
5
50
IQ
Quiescent Current
TJ = +25°C
5
6
mA
IO = 5 mA to 1.0 A
0.5
ΔIQ
Quiescent Current Change VI = 12.8 V to 25 V, IO = 500 mA
0.8 mA
ΔV/ΔT Output Voltage Drift(26)
VI = 13 V to 26 V, TJ = +25°C
IO = 5 mA
0.5
-1
mV/°C
VN
Output Noise Voltage
f = 10 Hz to 100 kHz, TA = +25°C
58
μV
RR
Ripple Rejection(26)
f = 120 Hz, IO = 500 mA,
VI = 14 V to 24 V
62
dB
VDrop
RO
Dropout Voltage
Output Resistance(26)
IO = 1 A, TJ = +25°C
f = 1 kHz
2
V
17
mΩ
ISC
Short-Circuit Current
IPK
Peak Current(26)
VI = 35 V, TA = +25°C
TJ = +25°C
250
mA
2.2
A
Notes:
25. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
26. These parameters, although guaranteed, are not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
KA78XXE / KA78XXAE Rev. 1.9
15
www.fairchildsemi.com
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