BTA208-800BDG(2014) Просмотр технического описания (PDF) - NXP Semiconductors.
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BTA208-800BDG Datasheet PDF : 13 Pages
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NXP Semiconductors
BTA208-800B
3Q Hi-Com Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 6
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 6
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 6
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 8
VT
on-state voltage
IT = 10 A; Tj = 25 °C; Fig. 9
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 10
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 10
ID
off-state current
VD = 800 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 535 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; snubberless
condition; gate open circuit; Fig. 11
tgt
gate-controlled turn-on ITM = 12 A; VD = 800 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
Min Typ Max Unit
2
18
50
mA
2
21
50
mA
2
34
50
mA
-
31
60
mA
-
34
90
mA
-
30
60
mA
-
31
60
mA
-
1.3 1.65 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
1000 4000 -
V/µs
-
14
-
A/ms
-
2
-
µs
BTA208-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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