2SC4833 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC4833 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4833
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
ICEO
Collector cut-off current
At rated volatge
IEBO
Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=2.5A ; VCE=2V
hFE-2
DC current gain
IC=1mA ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.5A;IB1=0.5A
IB2=1A ,RL=60Ω
VBB2=4V
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1
mA
0.1
mA
10
25
10
13
MHz
0.3
μs
1.3
μs
0.1
μs
2
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