DTA123JUA Просмотр технического описания (PDF) - Willas Electronic Corp.
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DTA123JUA Datasheet PDF : 2 Pages
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WILLAS
FM120-M
DTA123JUA THRU
1P.0ANSPURDFAiCgEitMaOlUTNrTaSnCHsOiTsTtKoYrBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Featuresoptimize board space.
•
Pb-Fre•eLpoawcpkoawgeer liosssa,vhaigilhaebflfeiciency.
• High current capability, low forward voltage drop.
RoHS p•rHoidguhcstufrogrepcaacpkaibnilgityc.ode suffix ”G”
Package outline
SOD-123H
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Haloge•nGfrueaerdprirnogdfuocr tofvoerrvpoaltcakgiengprcootedcetiosnu.ffix “H”
• Epoxy m• UeletrtashUigLh-9s4peVe-d0sfwlaitmchminagb. ility rating
• Moisure• SSielicnosnitievpitiytaxLieavl pella1nar chip, metal silicon junction.
• Built-in •bLiaesadre-fsreisetoprasrtesnmaebelet etnhveirocnomnfeignutarlasttioanndoafrdasnoifnverter circuit
•
wTiasdhoitvehlaaobtniuoitatan•MscgRHMtoeroeoeanIHLlosanco-SfiglesSlheoactpTnowlatrmDiorfnsrnd-noeg1ueecsic9ecogttp5xfnrac0aootost0erdilivmprus/n2edactpc2taobalkf8leofiinitartntegahpsplaciiynnuocg-tkedfierlnioilemmgsfsucitifnorshfeidatxeoset"iriiGnssnsug"tpoffuiprxsta."HrwTa"histheityiccoaemlsffopelchetatsev. e the
• Only the• Eopno/oxyff:cUoLn9d4it-iVo0nsranteedefdlatmoebreetsaerdtafnotr operation, making
device d• eCsaigsen:eMaoslyded plastic, SOD-123H
Absolute
m• Taexrmiminuamls :rPalatitendgtser@mi2na5lкs, solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
.010(0.25)
.003(0.08)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
MPaertahmoedt2er026
Min Typ Max Unit
.087(2.20)
VCC
•SPupoplalyrvitoylt:aIgnedicated by cathode band --- -50 ---
V
Dimensions in inche.s07a0n(d1.(8m0il)limeters)
VIN
Input voltage
-12 ---
5
V
IO
IC(MAX)
• Mounting Position : Any
Output current
---
• Weight : Approximated 0.011 gram
-100
-100
---
mA
Pd
Power dissipation
--- 200 ---
mW
Tj
Tstg
Junction MtemApXeIrMatuUreM
Storage temperature
RATINGS
AND--5-E-5LEC1-T5--0RICA1-5-L-0
CHAććRACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Electrical CharacteriRsAtiTcINsG@S 25к
.056(1.40)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM.014670(-1M.H20F) M180-MH FM1100-MH FM1150-MH FM1200-
SymMbaorlking Code
Parameter
VVII((Moofnfa)) ximumInRpuetcuvrorletangt ePe((VVakCOC=R=-e0-5v.3VeVr,s,IeOIO=V=-o1-5l0tam0gAe)A)
VOM(ona) ximumORutMpuSt Vvoollttaagge= e (IO/II -5mA/-0.25mA
Min Typ 12Max 1U3nit 14
-0.5
---
VRRM------
20-1--.-1
30VV
40
--- VRMS--- 14-0.3 21V
28
IMI axi= mumInDpuCt Bculorcrekinntg(VVIol-ta5gVe)
IOG(MoIffa) ximumODACutvpceuuratrrgceeunrtFregonarwtin(aVr(dVCCOR= ==e--5c50tVi= fVi,e,IdOVCI -u10r0)rmenAt )
--- VDC --- 20-3.6 30mA 40
---
---
-0.5 A
80 IO ---
---
RP1eak ForwInaprudtSruersgiestCaunrcreent 8.3 ms single half
R2f/sTTRuyp1peicriaml pToRT(hVsreeeaOrsdnmi=ssoa-tinat1lion0RrancVetee,sfrdiIresOalt=qoat5uianodmecne(AJcE(,yNfD=oE1teC002mM)eHthzo)d)
sine-wav1e.54
17
IFSM
2.2
21
--- RΘJA250
2.86
26
---
K¡
MHz
15
16
50
60
18
10
80
100
35
42
56
70
.05004(0.10)M6A0X.
80
100
1.0
30 .016(0.40)
.008(0.20)
40
115 120
150
200
105
140
150
200
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
Dimensions in12in0ches and (millimeters)
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MHSFuMg16g0e-MsHteFMd1S80o-MldHeFMr 1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC *Marking: 132 VF
0.50
0.70 Pad Layout0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.070.5
10
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90 mm
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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