BD235 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

BD235

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE = 2V

10

1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

10

IC MAX. (Pulsed)

IC MAX. (Continuous)

DC

1

10µs

0.1

1

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

10

IC = 10 IB

1

VBE(sat)

VCE(sat)

0.1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

40

35

30

25

20

15

10

5

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 4. Power Derating

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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