VUO16-08NO1 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
VUO16-08NO1 Datasheet PDF : 2 Pages
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VUO 16
30
A
IF
25
20
TVJ = 25°C
TVJ = 130°C
15
10
5
max.
typ.
100
A
IFSM
80
60
40
20
50 Hz
0.8 x VRRM
TVJ = 45°C
100
A2s
I2dt
TVJ = 45°C
TVJ = 130°C
TVJ = 130°C
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Fig. 1 Forward current versus voltage
drop per diode
80
Ptot W
70
60
50
40
30
0
10
10-3
10-2
10-1 s
100
1
t
ms 10
t
Fig. 2 Surge overload current per diode
I : Crest value. t:duration
FSM
Fig. 3 I2t versus time (1-10 ms)
per diode
RthKA K/W
0.5
1
1.5
2
3
4
6
25
A
IdAVM
20
15
10
20
5
10
0
0
5 10 15 20 25 A 0
25
50
75
100 125 °C 150
IdAVM
TA
Fig. 4 Power dissipation versus direct output current and ambient temperature
5
ZthJK
K/W
4
ZthJK
0
0 25 50 75 100 125 °C 150
TK
Fig. 5 Maximum forward current at
heatsink temperature TK
3
2
1
0
10-3
10-2
10-1
100
101
s
102
t
Fig. 6 Transient thermal impedance junction to heatsink per diode
Constants for ZthJK calculation:
i
Rth (K/W)
ti (s)
1
0.015
2
0.1
3
1.835
4
2.55
0.008
0.02
0.05
0.4
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