VUO60-12NO3 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
VUO60-12NO3 Datasheet PDF : 2 Pages
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VUO 60
80
A
70
IF 60
50
40
30
20
10
TVJ=125°C
TVJ= 25°C
600
A 50Hz, 80% VRRM
500
IFSM
400
TVJ = 45°C
300
200
100 TVJ = 125°C
104
A2s VR = 0 V
I2t
TVJ = 45°C
103
TVJ = 125°C
0
0.0
0.5
1.0 V 1.5
VF
Fig. 4 Forward current versus voltage
drop per diode
250
W
200
Ptot
150
100
0
0.001
0.01
0.1 s 1
t
Fig. 5 Surge overload current
RthHA :
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
5.0 K/W
102
1
2 3 4 5 6 7 m8 s910
t
Fig. 6 I2t versus time per diode
80
A
70
60
Id(AV)M
50
40
30
20
50
10
0
0 10 20 30 40 50 60 70A 0 20 40 60 80 100 120 °C
Id(AV)M
Tamb
Fig. 7 Power dissipation versus direct output current and ambient temperature
1.8
K/W
1.6
0
0 20 40 60 80 100 120 °C
TC
Fig. 8 Max. forward current versus
case temperature
1.4
ZthJH
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.001
0.01
0.1
1
Fig. 9 Transient thermal impedance junction to heatsink
10
s
t
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
0.883
2
0.098
3
0.202
4
0.417
0.102
0.103
0.492
0.62
100
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